Effect of magnetic field on magnetic anisotropy sensor.
نویسندگان
چکیده
منابع مشابه
Effect of magnetic anisotropy on magnetic shaking
The effect of magnetic shaking on both the transverse and axial shielding factors ~TSF and ASF! is investigated using open-ended cylindrical shields made of Metglas 2705M amorphous ribbons. Shaking enhancement is found to be strongly dependent on the orientation of the magnetic anisotropy of the shielding material, that is, the anisotropy axis should be aligned along the corresponding shielding...
متن کاملEffect of static magnetic field on the hemodynamic properties of blood flow containing magnetic substances
The use of magnetic fields in targeted drug delivery, especially for treatment of cancers and tumoral regions, is one of the significant techniques in the field of modern methods of treatment. Considering that many vital biological tissues have been located deep in the body, then for targeted drug delivery and effective treatment in these tissues, it is required to bring therapeutic agent to th...
متن کاملThe effect of magnetic field on the magnetic property of Agar/Fe3O4 nanocomposite
Agar/Fe3O4 nanocomposites were synthesized in the presence of an external magnetic field (~ 0.4 Tesla) and their characteristics were compared with the samples synthesized without considering the external magnetic field. In this study we used Fe2+ and Fe3+ for synthesizing Fe3O4 magnetic nanoparticles in the presence of agar as polymeric additive, by co-precipitation technique. Vibrating sample...
متن کاملLongitudinal Magnetic Field Effect on Torsional Vibration of Carbon Nanotubes
Torsional dynamic analysis of carbon nanotubes under the effect of longitudinal magnetic field is carried out in the present study. Torque effect of an axial magnetic field on a carbon nanotube has been defined using Maxwell’s relation. Nonlocal governing equation and boundary conditions for carbon nanotubes are obtained by using Hamilton’s minimum energy principle. Eringen’s nonlocal stress gr...
متن کاملA monolithic field-effect-transistor-amplified magnetic field sensor
We propose and demonstrate the operation of a monolithic field-effect-transistor-amplified magnetic field sensor device, in which a tunnel-magnetoresistive ~TMR! material is incorporated within the gate of a Si metal–oxide–semiconductor–field-effect transistor. A fixed voltage is applied across the TMR layer, which leads charge to build up within the gate. Applying or changing an external magne...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 1991
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.15.465